Apparatus for film deposition

ABSTRACT

A method and apparatus for depositing a thin film of material upon a base substrate including a glow discharge ion source for generating the particular ions that will be subsequently deposited upon the base substrate, a vacuum deposition chamber wherein the substrate material is located, and, intermediate between the glow discharge ion source and the vacuum deposition chamber, a constrictor electrode for isolating the deposition chamber from the ion chamber and an anode electrode for extracting ions from the plasma ion source and directing them toward the target substrate. A magnetic field is also provided in the apparatus of the present invention by the use of an externally wound magnetic coil to permit the glow discharge ion source to operate at a lower pressure and to constrict the flow of ions toward the substrate.

219- 121 s a M1204 XR 3 904,505

unltea DIaIES Patent 11 1 1111 3,904,505 Aisenberg 1 Sept. 9, 1975 [54]APPARATUS FOR FILM DEPOSITION 3,494,852 2/1970 Doctoroff 204/2983,534,385 lO/l970 Castaing et a1. 204/298 [75] inventor- A'senberg NamkMass- 3,562,141 2/1971 Morley et a1. 204/298 [73] Assignee: SpaceSciences, Inc., Waltham,

Mass. Primary Examiner-John H. Mack Assistant Examiner-D. R. Valentine[22] Flled' July 1972 Attorney, Agent, or FirmRichard J. Birch [21]Appl. No.: 271,014

Related US. Application Data [57] ABSTRACT [63] Continuation Of Ser. N0.21,282, March 20, 1970, A method and apparatus for depositing a thinfilm Of abandoned. material upon a base substrate including a glowdischarge ion source for generating the particular ions [52] US. Cl204/298; 1 17/93.1 GD; 1 17/933; that will be subsequently depositedupon the base sub- 219/121 EB strate, a vacuum deposition chamberwherein the sub- [51] Int. Cl... C23c 15/00; C23c 11/00; 823k 15/00strate material is located, and, intermediate between [58] Field ofSearch 204/298; 118/491, 49.5; the glow discharge ion source and thevacuum deposi- 1 17/933, 93.1 GD; 219/121 EB tion chamber, a constrictorelectrode for isolating the deposition chamber from the ion chamber andan [56] References Cited I anode electrode for extracting ions from theplasma UNITED STATES PATENTS ion source and directing them toward thetarget sub- 3 I 17 022 H1964 Bronson ct a1 2O4/l92 strate. A magneticfield is also provided in the appara- 204N192 tus of the presentinvention by the use of an externally 219/12] EB wound magnetic coil topermit the glow discharge ion 3,294,583 12/1966 Fedows ct a1...3,303,319 2/1967 Steigcrwaldmn 3,371,649 5/1968 Gowen 204/298 Source toOperate at a lower Pressure and I9 constrict 3,409,529 11/1968 Chopra eta1. 204/298 the flow of ions toward the substrate.

3,437,864 4/1969 Kofoid et al.... 204/192 3,472,751 10/1969 King 204 19218 Clam, 2 D'awmg Flgul'es MAGNET CORE PLASMA ION SOURCE TO VACUUMSYSTEM SYSTEM PDMPme l AND CONSTRICTOR ELECTRODE EXTRACTOR ANODE POWERSUPPLY DC SUBSTRATE SUPPLY POWER SUPPLY RF OSCILLATOR AND MATCHING 54NETWORK APPARATUS FOR FILM DEPOSITION CROSS-REFERENCE TO RELATEDAPPLICATION This application is a continuation application of mypreviously filed application, Ser. No. 21 ,282 filed Mar. 20, 1970 nowabandoned for FILM DEPOSITION.

BACKGROUND OF THE INVENTION The present invention relates to a methodand apparatus for providing improved thin film deposition.

There have been numerous techniques employed for depositing thin film,most of which involve the use of a substrate, which is elevated to ormaintained at a relatively high temperature. This high substratetemperature has been considered necessary during the deposition of thethin film for the purpose of increasing the mobility of the atoms beingdeposited. However, this high temperature substrate has certain problemsassociated with it. For example, one disadvantage of vapor depositionupon a hot substrate is that the impurities are caused to diffuse outfrom the substrate and thereby affect the composition of the thin filmthat is being deposited. Further, the excess temperatures cause a poordefinition at the junction between the film and the base substratematerial.

It is known that the necessary substrate atom mobility is obtained byheating the incident ions that are to be deposited on the substratesurface rather than the substrate itself. The apparatus of the presentinvention takes this fact into account and permits less heating of thesubstrate by isolating the substrate within a separate chamber adjacentto the plasma ion source chamber. Further, the apparatus is designed tocontrol the energy of impinging ions by appropriate biasing meanscoupled to the substrate material.

It is an object of the present invention, therefore, to provide animproved method and means for the deposition of thin films.

It is another object of the present invention to provide film depositionapparatus wherein the substrate can be maintained at a relatively lowtemperature.

A further object of this invention is to provide a method forfabricating a thin film-substrate structure wherein the film can bedeposited at a high rate and in a controllable manner.

Another object of the present invention is to provide a thin film upon abase substrate wherein there has been little or no impurity diffusionfrom the substrate affecting the thin film deposited thereon.

Still another object of the present invention is to provide a thinfilm-substrate structure wherein the junction between the two substancesis well defined.

Other objects of the present invention will become apparent upon readingthe detailed description in conjunction with the drawings and appendedclaims.

SUMMARY OF THE INVENTION One embodiment of the apparatus of the presentinvention provides a means by which the thin film is formed on asubstrate by ionizing and electrostatically accelerating a beam ofatomic particles of a material which is to be deposited on the substrateas a thin film. A plasma ion source acts as a such source of atoms ofthe material to be deposited. An electrical discharge occurs within thissource of ions, and the desired material is converted into a plasma formwith the ions to be deposited in a mixture with high energy electrons.An

axial magnetic field may be used to constrain the orbits of theelectrons and increase their likelihood of ionizing atoms of thematerial under consideration. This magnetic field permits the electricaldischarge to operate at a lower gas pressure than could be used withoutthe magnetic field. Thus, in the source discharge chamber, there is aplasma which contains a large concentration of ions of the species thatare to be subsequently deposited.

A plasma discharge from this plasma ion source is generated into avacuum deposition chamber where the substrate material is located. Thiscan be accomplished by locating an extraction electrode in the vacuumdeposition chamber and by the use of a constrictor means separating thehigher pressure plasma ion chamber from the lower pressure vacuumdeposition chamber. The ions are extracted through an aperture in theconstrictor by means of the applied electric field which maintains adischarge between the plasma source, which functions as a cathode, andthe extraction electrode, which is situated in the vacuum depositionchamber. The purpose of the constrictor means is to isolate the vacuumdeposition chamber from the higher pressures present in the plasma ionchamber while the extractor electrode pulls the positive ions within theplasma source toward the target substrate. It is often desirable tosurround the constrictor aperture with the same material as that to bedeposited on the substrate.

In another embodiment of the invention the accelerated beam may be of aninert gas and the ions to be deposited may be supplied by an auxilliarysource within the deposition chamber. The beam provides the energynecessary to deposit the ions from the source which coimpinge with theion beam.

BRIEF DESCRIPTION OF THE DRAWINGS These and other objects and advantagesof the present invention will be more clearly understood when consideredin conjunction with the accompanying drawings in which:

FIG. 1 is a cross-sectional diagram of one embodiment of the depositionsystem according to the invention.

FIG. 2 is a cross-sectional view of part of another embodiment of thedeposition system similar to that shown in FIG. 1.

DETAILED DESCRIPTION As hereinbefore mentioned, the present inventionpermits the deposition of improved thin films by means of an ion beamsource used in conjunction with a vacuum deposition chamber. FIG. 1shows an embodiment for practicing the present invention. In oneparticular system, a silicon film 21 is deposited on a single crystalsilicon substrate 22. The film 21 is shown in an exaggerated thicknessin FIG. 1.

Plasma ion source 10 generally includes chamber structure 11 havingvacuum line 13 and gas input line 12 connected thereto. Vacuum line 13connects to a vacuum pump (not shown) which controls the pressure insource 10. Also included in ion source 10 are silicon electrodes 14 and15, which connect externally to power supply 34 and resistor 38. With anelectrical discharge taking place within plasma ion source 10, thematerial which is silicon in this particular case, is introduced into aplasma formed by the high energy electrons. A magnetic field set up bymagnetic coil 30 influences the formation of the ions within plasma ionsource by constraining the orbits of the electrons and increasaing thelikelihood of ionizing atoms of silicon. This external magnetic fieldpermits the electrical discharge to operate at lower gas pressure thancould be used without the magnetic field.

The generation of an ionized plasma usually can occur through a neutralgas such as argon, hydrogen, or helium, or through a more active gas,such as nitrogen or oxygen or a mixture thereof, introduced via line 12.The ions produced in this source deposition chamber in turn bombard thecathode (electrodes 14 and 15) and sputter or vaporize atoms of materialinto a discharge space where they can be ionized. Thus, in the plasmaion source 10, there is produced a plasma which contains largeconcentrations of ions of the species that one wishes to deposit uponsubstrate 22.

Many times it is desirous to obtain mixtures of ions, such as aluminumand oxygen, silicon and oxygen, or silicon and nitrogen, for thedeposition of insulating layers, such as aluminum oxide, silicondioxide, or silicon nitride. There are generally two differentapproaches. One approach is to use electrode material fabricated ofsilicon or aluminum and to introduce the necessary oxygen or nitrogengas into the plasma by means of the appropriate gas feed line 12 for themaintenance of this ion plasma. There may be difficulty, however, withthis approach since adjusting the partial pressures of the oxygen ornitrogen in order to obtain the correct film stochiometry appears to bedifficult. An alternative way, which appears to be advantageous is tofabricate the electrode material of the necessary materials, such assilicon oxide or nitride. One then introduces the correct mixture intothe plasma source by operating a glow discharge between the twoelectrodes in the ion source chamber 10. Consideration of other types offilms is taken up later after a discussion of the operation of thedeposition chamber.

The next occurence in the operation of the apparatus is the extractionof the plasma discharge from the plasma ion source 10 into vacuumdeposition chamber where the substrate 22 is located. To facilitatethis, an anode extraction electrode 24 is located in deposition chamber20 along with a constrictor electrode 26. The purpose of constrictorelectrode 26 is basically to separate the higher pressure sputteringsource chamber 10 from the lower pressure film deposition chamber 20.The ions are extracted through the constrictor electrode 26 by means ofthe externally applied electric field, which maintains a dischargebetween the plasma source 10, operated as a cathode, and the extractoranode 24, located in deposition chamber 20. Anode supply 36 facilitatesthe foregoing by biasing the anode positively with reference to thesource 10. The external electric field generated by power supply 36 isoriented along the external magnetic field caused by magnetic coil 30 sothat the plasma is extracted along magnetic field lines. This serves tomaintain the plasma in a constricted mode so that it is able to passthrough the aperture 26A in constrictor electrode 26 more efficiently.Anode electrode 24 acts to extract electrons from the plasma source, andthe electric field generated by the extracted electron pulls thepositive ions from plasma source 10 along with them. The anode 24 has anaperture 24A in it located along the axis determined by the magneticfield produced by magnetic coil 30, and this in turn serves to maintainthe plasma constriction and permits a large fraction of the extractedpositive ions to pass through the anode aperture, subsequently impingingon substrate 22. The apertures in the electrodes 24 and 26 permitsdifferential pumping to occur, thereby maintaining a good vacuum (about10 Torr) in deposition chamber 20 (provided via vacuum line 29), whilesomewhat higher pressure is maintained in plasma ion source 10. It isoften desirable to surround the apertures in electrodes 24 and 26 withthe same material as that to be deposited on the substrate. Note thatthe magnetic field serves three purposes: In the plasma ion source itpermits the source to operate at lower pressures; it aids inconstricting the plasma through the constrictor electrode; and it helpsto maintain the plasma in a constricted path on itsway to the substrate.

The constrictor electrode 26 may be left essentially electricallyfloating through a high impedance resistor 46 to an appropriatepotential such as the one determined by the resistors 40 and 42. For theembodiment of FIG. 1, this potential is intermediate between thepotential of the cathode in source 10 and the anode in chamber 20.Similarly, the insulating shield 17, positioned between electrodes 14and 26, may be left floating. Shield 17 minimizes the tendency of thedischarge to attach other than where desired. A focusing electrode 19can also be used between anode 24 and substrate 22. Electrode 19 isshown connected to anode 24, but can be connected to a separate biasingsupply if desired thereby controlling the final path of the ion beam.

The potential on substrate 22 relative to that of plasma ion source 10and extractor anode 24 determines in large part of the kinetic energywith which the positive ions impinge on substrate 22. Reference isdirected to substrate supply 50 which connects via the secondary windingof transformer 52 to substrate 22.

The combination of the DC power supply 50 with the by-pass capacitor 51permits a DC bias to be applied to the substrate while maintaining thepower supply at a low impedance relative to ground. An AC or RF voltageis superimposed on the DC bias voltage by means of oscillator 54 andtransformer 52. The use of the transformer permits the application of anadditional AC voltage without modifying the DC bias voltage provided bythe DC supply 50.

As previously mentioned, the axial magnetic field helps maintain the ionbeam in a columnated mode after it is extracted through the aperture inanode 24 and minimizes space charge spreading. In this way, onev canachieve a higher deposition rate than would otherwise be expected in theabsence of a magnetic columnating field.

There are some modifications of the deposition system of the presentinvention that will enable the deposition of either conducting films oninsulating substrates or dlepositing insulating films on conducting orinsulating substrates. The necessity for these modifications relates tothe fact that when depositing an insulating substrate of film it is moredifficult to control the energy of the ions impinging on the substrate22, and therefore is necessary to prevent the surface from building upto a positively charged repelling condition. In the present invention,as shown in FIG. 1, this has been remedied by using an rf power supply54.

The AC or if supply, which connects via transformer 52 to substrate 22,operates at a high frequency (at about 15Kc or 13 megacycles, forexample) and is used to alternately bias the substrate surface positiveand negative by using the displacement current that flow through theinsulating film or substrate. The alternating positive and negativepotential applied to the substrate is used to extract positive ions andelectrons from the plasma so that the net current to the surface iszero; but at the same time, during portions of the cycles, positive ionscan be attracted to the surface. The rf amplitude applied to thesubstrate determines the energy of the positive ions attracted to thesurface and can be used to control the deposition energy.

FIG. 2 shows a partial view of the system of FIG. 1 which has beenadapted for practising another embodiment of the invention. A vaporizingsource 62 and associated power source 60 are added to the configurationof FIG. 1. Source 62 is located in chamber near to substrate 22. Inpractising this embodiment of the invention, the introduction of energyinto the surface atoms of the vaporizing source is primarily to effectvaporization, with the energy to effect deposition on the substratebeing primarily supplied by an energetic beam of gaseous ions. This canbe accomplished by using an argon beam, for example, generated from theplasma source in conjunction with a source of atoms to be deposited andlocated in chamber 20. Thus, an energetic beam of gaseous ions, such asargon or another inert gas, coimpinge on the substrate surface withatoms from source 62. Within one or two collisions the high kineticenergy of the argon ion beam is transferred to the lower energy neutralfilm atoms to be deposited on the substrate surface and gives them thenecessary mobility so that they can nucleate and form an improved film.For example, with the embodiment of FIG. 2 one could deposit siliconfilms on a substrate by means of thermal vaporization of silicon fromsource 62, concurrently with impingement on the surface of a high energyargon beam, for example. This beam should provide the necessary kineticenergy to transfer to the silicon atoms by means of argon-siliconcollisions on the surface.

Source 62 is shown schematically but can be any one of various types ofsources of atoms. For example, source 62 may be a sputtering source, acrucible-type vaporization source or even a resistively heated ribbon.

There are other ways that a deposition material can be introduced intothe source plasma. One is by sputtering of material from the electrodes14 and 15 of FIG. 1. Thus, a silicon electrode would be used for thedeposition of silicon films, while a carbon electrode would be used forthe deposition of carbon films. Metallic electrodes, of course, can beused for the deposition of metallic films. An alternatively way ofintroducing the deposition material into the plasma at a much fasterrate is by the introduction of the deposition material in the vapor orgaseous form or as a component of a gaseous additive material and thesubsequent decomposition of the gaseous additive material into theappropriate ions by means of the energy of the plasma. This is a form ofplasma pyrolysis. The use of a hydrocarbon gas, for example, in chamber10 can permit the deposition of carbon films on the substrate since theions exiting from the ion source will consist of carbon ions and ofhydrogen ions. The hydrogen ions incident on the substrate will help toremove residual oxygen ions that may be on the substrate and thus,enhance the subsequent deposition of the carbon ions.

The use of this ion beam deposition technique has shown, for example,that insulating films of carbon can be deposited with materialproperties very similar to that of carbon in the diamond form. Theobserved points of similarity between the ion beam deposited carbon formand a diamond-like material consists of the following: 1 high index ofrefraction, 2) high electrical resistivity, 3) transparency in thevisible range, 4) high di-electric constant, 5) ability to scratchglass. These insulating carbon films also show a high resistance tohydrofluoric acid etching. One advantage of insulating carbon films isthat such films are quite resistant to sodium ion diffusion throughthese films which occurs at elevated temperatures. This is in agreementwith what would be expected for a densely packed diamond-like carbonstructure which has densely packed grain boundaries and resists themotion of relatively large alkali ions. Stable insulating andsemiconductor carbon films can therefore be produced by this techniqueand it is expected that the techniques of the invention will findwidespread use in the semi-conductor field.

Mixtures of gases or vapors can also be used to de posit various filmcompounds. For example, tungsten and carbon mixtures or compoundsthereof can be deposited in the tungsten carbide form by using eithertungsten and carbon electrodes or, for more rapid deposition byintroducing a tungsten compound in the gaseous form and a hydrocarboncompound in the gaseous form into the plasma ion source region.

Apparatus similar to that shown in Flg. 1 can be used to deposit acarbon-diamond film. The electrodes 14 and 15 may be made of carbon, andthe mixture gas may be methane for example (a hydro-carbon gas). Thecarbon ions are introduced into a plasma from ion source 10 bysputtering from the electrodes themselves or from the gas.

By means of the acceleration potential applied to the substrate, it ispossible to have the ions come in with a moderately high kinetic energy(about electron volts for example). As a result of this large kineticenergy of the incident ions, these ions when they strike the depositionsurface retain a very high surface mobility and can move about tonucleate into a single crystal structure. At the same time, the carbonatoms already on the deposition surface, in the process of scatteringthe incident ions themselves, will pick up kinetic energy and becomemobile. Thus, the incident ion and the first few surface monolayers ofthe deposition surface are at a relatively high energy compared to thatof the basic substrate. These surface atoms retain enough energy so thatthey can nucleate into a diamond-like single crystal structure.

Therefore, the apparatus of the present invention can be used to depositvarious types of films or different substrates and does so by an ionbeam technique, wherein the degree and uniformity of deposition arecontrolled. The apparatus can be also be implemented for use with avapor source, which is uaually located in the deposition chamber. Suchan arrangement has also been used to supplement the deposition from theion beam. In other words a beam containing silicon ions could be usedwith a silicon vapor source. Another film so deposited was molybdenum.

Another feature of the invention is that relatively small layers ofdiamond-like carbon can be deposited. Usually for carbon to form into adiamond-like crystallographic structure it is necessary that the carbonatoms be in a high temperature, high pressure, environment for asufficiently long time so that the crystallization into a diamond formcan occur. The technique used herein employs an energetic ion beam thatdoes not require high pressures since only a small portion of the carbonis heated to a high temperature at one time.

Having described some of the features, objects and advantages of theinvention, other modifications of and departures from the embodimentsdisclosed herein will become apparent to those skilled in the art ofwhich are contemplated as falling within the spirit and scope of theinvention and are to be limited solely by the appended claims.

What is claimed is:

1. A film deposition apparatus for depositing a film on a substratecomprising:

a. a deposition chamber having means for containing the substrate;

b. a source of deposition atoms to be deposited on the substrate, saidsource of atoms being located within said deposition chamber;

c. glow discharge ion source means for producing an energetic beam ofgaseous ions, which may be of the same material to be deposited;

d. means disposed between said ion source and said deposition chamberfor producing a pressure differential between the ion source and thedeposition chamber; and,

e. means for directing said energetic beam of ions from the ion sourceto impinge upon the substrate, further wherein said energetic beam ofions and said source of deposition atoms are positioned with respect toeach other and with respect to the substrate to provide for concurrentimpingement of said ions and said atoms upon the substrate.

2. A film deposition apparatus as set forth in claim 1 wherein saidsource of ions includes ions of an inert gas.

3. A film deposition apparatus as set forth in claim 2 wherein saidinert gas includes argon.

4. A film deposition apparatus as set forth in claim 1 wherein saidsource of deposition atoms includes silicon atoms.

5. Film deposition apparatus for depositing a film on a substratecomprising:

a. a deposition chamber having means for containing a base substrate;

b. a second chamber and means for maintaining at least one gas withinsaid second chamber;

c. at least two spaced electrodes positioned within said second chamberwith at least one of said electrodes being at least partly formed of thematerial which is to be deposited; means for establishing a sufficientelectrical potential between said spaced electrodes to cause a glowdischarge therebetween which releases atoms of the material which is tobe deposited from said electrode at least partly formed of said materialand ionizes said released deposition material atoms to form ionsthereof;

e. means disposed between said second chamber and said depositionchamber for producing a pressure differential between said secondchamber and said deposition chamber;

f. extraction electrode means positioned within said deposition chamberfor extracting the ions from said second chamber into said depositionchamber and through an aperture in the extraction electrode means;

g. accelerating means for causing at least some of said extracted ionsto impinge upon said substrate thereby depositing a film on thesubstrate; and,

h. means for establishing an axial magnetic field between said secondchamber and said deposition chamber with the axis of the magnetic fieldbeing substantially parallel to the axis of said extraction electrodemeans aperture.

6. The apparatus of claim 5 further characterized by means for applyingan electrical potential between at least one of said electrodes and thebase substrate contained within said base substrate containing means.

7. The apparatus of claim 5 wherein said means for producing a pressuredifferential includes means for maintaining said second chamber at ahigher pressure than said deposition chamber.

8. The apparatus of claim 5 wherein said ions are carbon ions and saidfilm is a film of carbon having diamond-like characteristics.

9. The apparatus of claim 5 wherein said ions are carbon ions and saidfilm is a carbon film having a high index of refraction, high electricalresistivity, transparency in the visual range, a high dielectricconstant and the ability to scratch glass.

10. The apparatus of claim 5 wherein said means for producing a pressuredifferential comprises constrictor electrode means directly separatingsaid second chamher from said deposition chamber and having an aperturedisposed therein through which said ions flow from said second chamberinto said deposition chamber.

1 1. An apparatus for depositing a relatively thin film upon a basesubstrate material comprising:

a. a source of energetic ions, at least some of said ions being of anormally solid deposition material;

b. a deposition chamber having means for containing a base substrate;

c. constrictor electrode means positioned between said source of ionsand said deposition chamber and having an aperture disposed thereinthrough which said ions flow from said source of ions into saiddeposition chamber;

(1. extraction electrode means positioned between said constrictorelectrode means and said means for containing the base substrate andhaving an aperture therein through which said ions flow; and, means forestablishing an axial magnetic field between said source of energeticions and said deposition chamber with the axis of the magnetic fieldbeing substantially parallel to the axis of said extraction electrodemeans aperture; and

e. means for applying an electrical potential between said source ofenergetic ions and the base substrate as contained within the depositionchamber wherein said electrical potential is an AC voltage.

12. An apparatus for depositing a relatively thin film 0 upon a basesubstrate material comprising:

a. a source of energetic ions, at least some of said ions being of anormally solid deposition material;

b. a deposition chamber having means for containing a base substrate;

c. constrictor electrode means positioned between said source of ionsand said deposition chamber and having an aperture disposed thereinthrough which said ions flow from said source of ions into saiddeposition chamber wherein said constrictor electrode means aperture islined with a material which is the same as the deposition material; and

d. extraction electrode means positioned between c. at least two spacedelectrodes positioned within said second chamber with at least one ofsaid electrodes being at least partly formed of the material which is tobe deposited;

said constrictor electrode means and said means 5 .means forestablishingasufficient electrical potenfor containing the basesubstrate and having an aptial between said spaced electrodes to cause aglow erture therein through which said ions flow; and, dischargetherebetween which releases atoms of means for establishing an axialmagnetic field bethe material which is to be deposited from said tweensaid source of energetic ions and said deposielectrode at least partlyformed of said material tion chamber with the axis of the magnetic fieldl0 and ionizes said released deposition material atoms beingsubstantially parallel to the axis of said exto form ions thereof;traction electrode means aperture. means disposed between said secondchamber and 13. An apparatus for depositing a relatively thin film saiddeposition chamber for producing a pressure upon a base substratematerial comprising: differential between said second chamber and saida. a source of energetic ions, at least some of said ions depositionchamber;

being of a normally solid deposition material; extraction electrodemeans for extracting the ions b. a deposition chamber having means forcontaining from said second chamber into said deposition a basesubstrate; chamber through an aperture in the extraction c. constrictorelectrode means positioned between electrode means wherein saidextraction electrode said source of ions and said deposition chambermeans aperture is lined witha material which is the and having anaperture disposed therein through same as the material which is to bedeposited; which said ions flow from said source of ions into g.accelerating means for causing at least some of said deposition chamber;and, said extracted ions to impinge upon said substrate d. extractionelectrode means positioned between thereby depositing a film on thesubstrate; and,

said constrictor electrode means and said means h. means forestablishing an axial magnetic field befor containing the base substrateand having an aptween said second chamber and said deposition erturetherein through which. said ions flow chamber with the axis of themagnetic field being wherein said extraction electrode means aperturesubstantially parallel to the axis of said extraction is lined with amaterial which is the same as the deelectrode means aperture.

position material; and, means for establishing an axial magnetic fieldbetween said source of energetic ions and said deposition chamber withthe axis of the magnetic field being substantially paral- 16. Filmdeposition apparatus for depositing a film on a substrate comprising:

a. a deposition chamber having means for containing a base substrate; b.a second chamber and means for maintaining at lel to the axis of saidextraction electrode means aperture.

14. An apparatus for .depositing a relatively thin film upon a basesubstrate material comprising:

a. a source of energetic ions, at least some of said ions being of anormally solid deposition material;

b. a deposition chamber having means for containing a base substrate; I

constrictor electrode means positioned between said source of ions andsaid deposition chamber and having an aperture disposed therein throughwhich said ions flow from said source of ions into said depositionchamber wherein said constrictor electrode means aperture is lined witha material which, is the same as the deposition material; and,

d. an extraction electrode means positioned between 15. Film depositionapparatus for depositing a film on a substrate comprising:

a deposition chamber having means for containing a base substrate;

b. a second chamber and means for maintaining at least one gas withinsaid second chamber;

least one gas within said second chamber;

0. at least two spaced electrodes positioned within said second chamberwith at least one of said electrodes being at least partly formed of thematerial which is to be deposited,

. means for establishing a sufficient electrical potential between saidspaced electrodes to cause a glow discharge therebetween which releasesatoms of the material which is to be deposited from said electrode atleast partly formed of said material and which ionizes said releaseddeposition material atoms to form ions thereof;

. means for producing a pressure differential between said secondchamber and said deposition chamber comprising constrictor electrodemeans positioned between said second chamber and said deposition-chamberand having an aperture disposed therein through which said ions flowfrom said second chamber into said deposition chamber, said constrictormeans aperture being lined with a material which is the same as thematerial which is to be deposited;

. extraction electrode means for extracting the ions from said secondchamber into said deposition chamber through an aperture in theextraction electrode means;

g. accelerating means for causing at least some of said extracted ionsto impinge upon said substrate thereby depositing a film on thesubstrate; and,

h. means for establishing an axial magnetic field between said secondchamber and said deposition chamber with the axis of the magnetic fieldbeing substantially parallel to the axis of said extraction electrodemeans aperture.

17. Film deposition apparatus for depositing a film on a substratecomprising:

a. a deposition chamber having means for containing a base substrate;

b. a second chamber and means for maintaining at least one gas withinsaid second chamber;

c. at least two spaced electrodes positioned within said second chamberwith at least one of said electrodes being at least partly formed of thematerial which is to be deposited;

d. means for establishing a sufficient electrical potential between saidspaced electrodes to cause a glow discharge therebetween which releasesatoms of the material which is to be deposited from said electrode atleast partly formed of said material and which ionizes said releaseddeposition material atoms to form ions thereof;

e. means for producing a pressure differential between said secondchamber and said deposition chamber comprising constrictor electrodemeans positioned between said second chamber and said deposition chamberand having an aperture disposed therein through which said ions flowfrom said second chamber into said deposition chamber, said constrictormeans aperture being lined with a material which is the same as thematerial which is to be deposited;

' f. extraction electrode means for extracting the ions from said secondchamber into said deposition chamber through an aperture in theextraction electrode means wherein said extraction electrode meansaperture is lined with a material which is the same as the materialwhich is to be deposited;

g. accelerating means for causing at least some of said extracted ionsto impinge upon said substrate thereby depositing a film on thesubstrate; and,

b. means for establishing an axial magnetic field between said secondchamber and said deposition chamber with the axis of the magnetic fieldbeing substantially parallel to the axis of said extraction electrodemeans aperture.

118. Film deposition apparatus for depositing a film on a substratecomprising:

a. a deposition chamber having means for containing a base substrate;

b. a second chamber and means for maintaining at least one gas withinsaid second chamber;

c. at least two spaced electrodes positioned within said second chamberwith at least one of said electrodes being at least partly formed of thematerial which is to be deposited;

. means for establishing a sufficient electrical potential between saidspaced electrodes to cause a glow discharge therebetween which releasesatoms of the material which is to be deposited from said electrode atleast partly formed of said material and ionizes said releaseddeposition material atoms to form ions thereof;

e. means disposed between said second chamber and said depositionchamber for producing a pressure differential between said secondchamber and said deposition chamber;

f. extraction electrode means for extracting the ions from said secondchamber into said deposition chamber through an aperture in theextraction electrode means;

g. accelerating means for causing at least some of said extracted ionsto impinge upon said substrate thereby depositing a film on thesubstrate;

h. means for establishing an axial magnetic field between said secondchamber and said deposition chamber with the axis of the magnetic fieldbeing substantially parallel to the axis of said extraction electrodemeans aperture; and,

. means for applying an electrical potential between at least one ofsaid electrodes and the base substrate contained within said basesubstrate containing means, wherein said electrical potential is an ACvoltage.

1. A FILM DEPOSITION APPARATUS FOR DEPOSITING A FILM ON A SUBSTRATECOMPRISING: A. A DEPOSITION CHAMBER HAVING MEANS FOR CONTAINING TESUBSTRATE, B. A SOURCE OF DEPOSITION ATOMS TO BE DEPOSITED ON THESUBSTRATE, SAID SOURCE OF ATOMS BEING LOCATED WITHIN SAID DEPOSITIONCHAMBER, C. GLOW DISCHARGE ION SOURCE MEANS FOR PRODUCING AN ENERGETICBEAM OF GASEOUS IONS, WHICH MAY BE OF THE SAME MATERIAL TO BE DEPOSITED,D. MEANS DISPOSED BETWEEN SAID ION SOURCE AND SAID DEPOSITION CHAMBERFOR PRODUCING A PRESSURE DIFFERENTIAL BETWEEN THE ION SOURCE AND THEDEPOSITION CHAMBER, AND, E. MEANS FOR DIRECTING SAID ENERGETIC BEAM OFIONS FROM THE ION SOURCE TO IMPINGE UPON THE SUBSTRATE FURTHER WHEREINSAID ENERGETIC BEAM OF IONS AND SAID SOURCE OF DEPOSITION ATOMS AREPOSITIONED WITH RESPECT TO EACH OTHER AND WITH RESPECT TO THE SUBSTRATETO PROVIDE FOR CONCURRENT IMPINGEMENT OF SAID IONS AND SAID ATOMS UPONTHE SUBSTRATE.
 2. A film deposition apparAtus as set forth in claim 1wherein said source of ions includes ions of an inert gas.
 3. A filmdeposition apparatus as set forth in claim 2 wherein said inert gasincludes argon.
 4. A film deposition apparatus as set forth in claim 1wherein said source of deposition atoms includes silicon atoms.
 5. Filmdeposition apparatus for depositing a film on a substrate comprising: a.a deposition chamber having means for containing a base substrate; b. asecond chamber and means for maintaining at least one gas within saidsecond chamber; c. at least two spaced electrodes positioned within saidsecond chamber with at least one of said electrodes being at leastpartly formed of the material which is to be deposited; d. means forestablishing a sufficient electrical potential between said spacedelectrodes to cause a glow discharge therebetween which releases atomsof the material which is to be deposited from said electrode at leastpartly formed of said material and ionizes said released depositionmaterial atoms to form ions thereof; e. means disposed between saidsecond chamber and said deposition chamber for producing a pressuredifferential between said second chamber and said deposition chamber; f.extraction electrode means positioned within said deposition chamber forextracting the ions from said second chamber into said depositionchamber and through an aperture in the extraction electrode means; g.accelerating means for causing at least some of said extracted ions toimpinge upon said substrate thereby depositing a film on the substrate;and, h. means for establishing an axial magnetic field between saidsecond chamber and said deposition chamber with the axis of the magneticfield being substantially parallel to the axis of said extractionelectrode means aperture.
 6. The apparatus of claim 5 furthercharacterized by means for applying an electrical potential between atleast one of said electrodes and the base substrate contained withinsaid base substrate containing means.
 7. The apparatus of claim 5wherein said means for producing a pressure differential includes meansfor maintaining said second chamber at a higher pressure than saiddeposition chamber.
 8. The apparatus of claim 5 wherein said ions arecarbon ions and said film is a film of carbon having diamond-likecharacteristics.
 9. The apparatus of claim 5 wherein said ions arecarbon ions and said film is a carbon film having a high index ofrefraction, high electrical resistivity, transparency in the visualrange, a high dielectric constant and the ability to scratch glass. 10.The apparatus of claim 5 wherein said means for producing a pressuredifferential comprises constrictor electrode means directly separatingsaid second chamber from said deposition chamber and having an aperturedisposed therein through which said ions flow from said second chamberinto said deposition chamber.
 11. An apparatus for depositing arelatively thin film upon a base substrate material comprising: a. asource of energetic ions, at least some of said ions being of a normallysolid deposition material; b. a deposition chamber having means forcontaining a base substrate; c. constrictor electrode means positionedbetween said source of ions and said deposition chamber and having anaperture disposed therein through which said ions flow from said sourceof ions into said deposition chamber; d. extraction electrode meanspositioned between said constrictor electrode means and said means forcontaining the base substrate and having an aperture therein throughwhich said ions flow; and, means for establishing an axial magneticfield between said source of energetic ions and said deposition chamberwith the axis of the magnetic field being substantially parallel to theaxis of said extraction electrode means aperture; and e. means forapplying an electrical potential between said source of energetic ionsand the base substrate as contained within the deposition chamberwherein said electrical potential is an AC voltage.
 12. An apparatus fordepositing a relatively thin film upon a base substrate materialcomprising: a. a source of energetic ions, at least some of said ionsbeing of a normally solid deposition material; b. a deposition chamberhaving means for containing a base substrate; c. constrictor electrodemeans positioned between said source of ions and said deposition chamberand having an aperture disposed therein through which said ions flowfrom said source of ions into said deposition chamber wherein saidconstrictor electrode means aperture is lined with a material which isthe same as the deposition material; and, d. extraction electrode meanspositioned between said constrictor electrode means and said means forcontaining the base substrate and having an aperture therein throughwhich said ions flow; and, means for establishing an axial magneticfield between said source of energetic ions and said deposition chamberwith the axis of the magnetic field being substantially parallel to theaxis of said extraction electrode means aperture.
 13. An apparatus fordepositing a relatively thin film upon a base substrate materialcomprising: a. a source of energetic ions, at least some of said ionsbeing of a normally solid deposition material; b. a deposition chamberhaving means for containing a base substrate; c. constrictor electrodemeans positioned between said source of ions and said deposition chamberand having an aperture disposed therein through which said ions flowfrom said source of ions into said deposition chamber; and, d.extraction electrode means positioned between said constrictor electrodemeans and said means for containing the base substrate and having anaperture therein through which said ions flow wherein said extractionelectrode means aperture is lined with a material which is the same asthe deposition material; and, means for establishing an axial magneticfield between said source of energetic ions and said deposition chamberwith the axis of the magnetic field being substantially parallel to theaxis of said extraction electrode means aperture.
 14. An apparatus fordepositing a relatively thin film upon a base substrate materialcomprising: a. a source of energetic ions, at least some of said ionsbeing of a normally solid deposition material; b. a deposition chamberhaving means for containing a base substrate; c. constrictor electrodemeans positioned between said source of ions and said deposition chamberand having an aperture disposed therein through which said ions flowfrom said source of ions into said deposition chamber wherein saidconstrictor electrode means aperture is lined with a material which, isthe same as the deposition material; and, d. an extraction electrodemeans positioned between said constrictor electrode means and said meansfor containing the base substrate and having an aperture therein throughwhich said ions flow wherein said extraction electrode means aperture islined with a material which is the same as the deposition material; and,means for establishing an axial magnetic field between said source ofenergetic ions and said deposition chamber with the axis of the magneticfield being substantially parallel to the axis of said extractionelectrode means aperture.
 15. Film deposition apparatus for depositing afilm on a substrate comprising: a. a deposition chamber having means forcontaining a base substrate; b. a second chamber and means formaintaining at least one gas within said second chamber; c. at least twospaced electrodes positioned within said second chamber with at leastone of said electrodes being at least partly formed of the materialwhich is to be deposited; d. means for establishing a sufficientelectrical potential between said spaced electrodes to cause a glowdischarge therebetween which releases atOms of the material which is tobe deposited from said electrode at least partly formed of said materialand ionizes said released deposition material atoms to form ionsthereof; e. means disposed between said second chamber and saiddeposition chamber for producing a pressure differential between saidsecond chamber and said deposition chamber; f. extraction electrodemeans for extracting the ions from said second chamber into saiddeposition chamber through an aperture in the extraction electrode meanswherein said extraction electrode means aperture is lined with amaterial which is the same as the material which is to be deposited; g.accelerating means for causing at least some of said extracted ions toimpinge upon said substrate thereby depositing a film on the substrate;and, h. means for establishing an axial magnetic field between saidsecond chamber and said deposition chamber with the axis of the magneticfield being substantially parallel to the axis of said extractionelectrode means aperture.
 16. Film deposition apparatus for depositing afilm on a substrate comprising: a. a deposition chamber having means forcontaining a base substrate; b. a second chamber and means formaintaining at least one gas within said second chamber; c. at least twospaced electrodes positioned within said second chamber with at leastone of said electrodes being at least partly formed of the materialwhich is to be deposited, d. means for establishing a sufficientelectrical potential between said spaced electrodes to cause a glowdischarge therebetween which releases atoms of the material which is tobe deposited from said electrode at least partly formed of said materialand which ionizes said released deposition material atoms to form ionsthereof; e. means for producing a pressure differential between saidsecond chamber and said deposition chamber comprising constrictorelectrode means positioned between said second chamber and saiddeposition chamber and having an aperture disposed therein through whichsaid ions flow from said second chamber into said deposition chamber,said constrictor means aperture being lined with a material which is thesame as the material which is to be deposited; f. extraction electrodemeans for extracting the ions from said second chamber into saiddeposition chamber through an aperture in the extraction electrodemeans; g. accelerating means for causing at least some of said extractedions to impinge upon said substrate thereby depositing a film on thesubstrate; and, h. means for establishing an axial magnetic fieldbetween said second chamber and said deposition chamber with the axis ofthe magnetic field being substantially parallel to the axis of saidextraction electrode means aperture.
 17. Film deposition apparatus fordepositing a film on a substrate comprising: a. a deposition chamberhaving means for containing a base substrate; b. a second chamber andmeans for maintaining at least one gas within said second chamber; c. atleast two spaced electrodes positioned within said second chamber withat least one of said electrodes being at least partly formed of thematerial which is to be deposited; d. means for establishing asufficient electrical potential between said spaced electrodes to causea glow discharge therebetween which releases atoms of the material whichis to be deposited from said electrode at least partly formed of saidmaterial and which ionizes said released deposition material atoms toform ions thereof; e. means for producing a pressure differentialbetween said second chamber and said deposition chamber comprisingconstrictor electrode means positioned between said second chamber andsaid deposition chamber and having an aperture disposed therein throughwhich said ions flow from said second chamber into said depositionchamber, said constrictor means aperture being lined with a materialwhich is the same as the material which is To be deposited; f.extraction electrode means for extracting the ions from said secondchamber into said deposition chamber through an aperture in theextraction electrode means wherein said extraction electrode meansaperture is lined with a material which is the same as the materialwhich is to be deposited; g. accelerating means for causing at leastsome of said extracted ions to impinge upon said substrate therebydepositing a film on the substrate; and, h. means for establishing anaxial magnetic field between said second chamber and said depositionchamber with the axis of the magnetic field being substantially parallelto the axis of said extraction electrode means aperture.
 18. Filmdeposition apparatus for depositing a film on a substrate comprising: a.a deposition chamber having means for containing a base substrate; b. asecond chamber and means for maintaining at least one gas within saidsecond chamber; c. at least two spaced electrodes positioned within saidsecond chamber with at least one of said electrodes being at leastpartly formed of the material which is to be deposited; d. means forestablishing a sufficient electrical potential between said spacedelectrodes to cause a glow discharge therebetween which releases atomsof the material which is to be deposited from said electrode at leastpartly formed of said material and ionizes said released depositionmaterial atoms to form ions thereof; e. means disposed between saidsecond chamber and said deposition chamber for producing a pressuredifferential between said second chamber and said deposition chamber; f.extraction electrode means for extracting the ions from said secondchamber into said deposition chamber through an aperture in theextraction electrode means; g. accelerating means for causing at leastsome of said extracted ions to impinge upon said substrate therebydepositing a film on the substrate; h. means for establishing an axialmagnetic field between said second chamber and said deposition chamberwith the axis of the magnetic field being substantially parallel to theaxis of said extraction electrode means aperture; and, i. means forapplying an electrical potential between at least one of said electrodesand the base substrate contained within said base substrate containingmeans, wherein said electrical potential is an AC voltage.